‪Walter M. Weber‬ - ‪Google Scholar‬

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DOI: 10.1002/adem.201400577 TEM Study of Schottky Junctions in Reconﬁgurable Silicon ** Nanowire Devices By Sayanti Banerjee,* Markus Lo€fﬂer, Uwe Muehle, Katarzyna Berent, Andre Heinzig, Jens Trommer, Walter Weber and Ehrenfried Zschech The physical and electrical properties of a silicon nanowire reconﬁgurable ﬁeld effect transistor (RFETs) are determined by the Schottky André Heinzig Walter M. Weber In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field-effect transistors with Ni ISSN 1610-1642 Phys. Status Solidi C 11 · No. 11–12 November 1539–1722 (2014) current topics in solid state physics 11–12 Schottky barriers in Ni-silicided Si nanowire devices Jürgen Beister, Andre Wachowiak, André Heinzig, Jens Trommer, Thomas Mikolajick, and Walter M. Weber Journal For informal enquiries, please contact Dr. André Heinzig (andre.heinzig@tu-dresden.de, +49 351 463 39129) or Dr. Uta Schneider (uta.schneider@tu-dresden.de, +49 351 463 43700). Applications from women are particularly welcome.

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Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, André Heinzig, Thomas Mikolajick, Walter Weber, Benjamín Iñíguez and Alexander Kloes: Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors: 11:45: Martin Vanbrabant, Lucas Nyssens, Valeriya Kilchytska and Jean-Pierre Raskin Name / Info: Mario Heinzig, Heinzig, Maik Heinzig, Peter Heinzig, Rico Heinzig, Andree Heinzig, Andre Heinzig, Joachim Heinzig, Philine Heinzig MATZKE & HEINZIG :: News Eine Menge neuer Aufgaben, die auf die Teams an Oker und Elbe zukommen. Skip navigation. Contacts; Downloads; Impressum; Privacy . Skip navigation. News.
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*. 1. Chair of Nanoelectronic Materials, TU Dresden, Walter M. Weber, Jens Trommer, Matthias Grube, Andre Heinzig, Markus König, Thomas Mikolajick: Reconfigurable silicon nanowire devices and circuits: Jens Trommer, André Heinzig, Tim Baldauf, Thomas. Mikolajick, Walter M. Weber . NaMLab gGmbH and Center for Advancing Electronics Dresden (CfAED),. Andre Heinzig (NaMLab gGmbH, Technische Universität Dresden).
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The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems @article{Mikolajick2017TheRR, title={The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems}, author={T. Mikolajick and Andre Heinzig and J. Trommer and T. Baldauf and W. Weber to a depletion or accumulation zone close to the interface [8]. To in-vestigate these eﬀects we used doped VLS-grown nanowires as test vehicles and characterized them individually. Abstract. DOI: 10.1002/adem.201400577 TEM Study of Schottky Junctions in Reconﬁgurable Silicon ** Nanowire Devices By Sayanti Banerjee,* Markus Lo€fﬂer, Uwe Muehle, Katarzyna Berent, Andre Heinzig, Jens Trommer, Walter Weber and Ehrenfried Zschech The physical and electrical properties of a silicon nanowire reconﬁgurable ﬁeld effect transistor (RFETs) are determined by the Schottky André Heinzig Walter M. Weber In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field-effect transistors with Ni ISSN 1610-1642 Phys.

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Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions. Moved Permanently. The document has moved here.